Recently I saw the concept of "wide bandgap". To check it out, I found the following paper that describes the characteristics of wide bandgap semiconductors:
Enhance power electronic devices with wind bandgap semiconductors
It states that currently silicon (Si) is used in most power electronic devices(diodes, MOSFET, IGBT). As the high voltage transmission lines (HVDC, EHV line) are obtaining popularity and more widely accepted in many countries, the power electronic devices are in need of much higher break down voltage. Si has its limitation in meeting this requirement. Instead, silicon carbide (SiC, 碳化硅,金刚砂), and gallium nitride (GaN, 氮化镓), and diamond can be considered because of the ten times greater electric field strength.
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